发明名称 |
METHOD FOR FORMING SILICON OXIDE NANOPATTERN, METHOD FOR FORMING METAL NANOPATTERN AND MAGNETIC RECORDING MEDIUM FOR INFORMATION STORAGE USING SAME |
摘要 |
The present invention relates to a method for forming a silicon oxide nanopattern, in which the method can be used to easily form a nanodot or nanohole-type nanopattern, and a metal nanopattern formed by using the same can be properly applied to a next-generation magnetic recording medium for storage information, etc., a method for forming a metal nanopattern, and a magnetic recording medium for information storage using the same. The method for forming a silicon oxide nanopattern includes the steps of forming a block copolymer thin film including specific hard segments and soft segments containing a (meth)acrylate-based repeating unit on silicon oxide of a substrate; conducting orientation of the thin film; selectively removing the soft segments from the block copolymer thin film; and conducting reactive ion etching of silicon oxide using the block copolymer thin film from which the soft segments are removed, as a mask to form a silicon oxide nanodot or nanohole pattern. |
申请公布号 |
EP2894660(A4) |
申请公布日期 |
2016.03.30 |
申请号 |
EP20130834601 |
申请日期 |
2013.09.05 |
申请人 |
LG CHEM, LTD.;IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) |
发明人 |
HAN, YANG-KYOO;LEE, JE-GWON;LEE, HYUN-JIN;KIM, NO-MA;YOON, SUNG-SOO;SHIN, EUN-JI;JUNG, YEON-SIK |
分类号 |
H01L21/027;C08F220/18;C08F220/56;G03F7/00 |
主分类号 |
H01L21/027 |
代理机构 |
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地址 |
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