SEMICONDUCTOR DEVICE

摘要

A semiconductor device according to an embodiment includes a SiC layer including a first region provided at a surface. The first region satisfies N A - N D < 5 × 10 15 cm -3 when a concentration of a p-type impurity is denoted by N A , whereas a concentration of an n-type impurity is denoted by N D . The surface is inclined at 0 degrees or more and 10 degrees or less to a {000-1} face, or the surface having a normal direction inclined at 80 degrees or more and 90 degrees or less to a <000-1> direction. The device includes a gate electrode, a gate insulating film provided between the SiC layer and the gate electrode, and a second region provided between the first region and the gate insulating film. The second region has a nitrogen concentration higher than 1 × 10 22 cm -3 .