| 摘要 |
The present invention relates to a field of semiconductor devices, and more particularly to a heterostructure based on a GaInAsSb solid solution with a reverse p-n junction, to a method of producing the heterostructure, and to a light emitting diode based on the heterostructure. The provided heterostructure comprises a substrate containing GaSb, an active layer which contains a GaInAsSb solid solution and which is disposed over the substrate, a confining layer for localizing major carriers which contains a AlGaAsSb solid solution and which is disposed over the active layer, a contact layer which contains GaSb and which is disposed over the confining layer, wherein the heterostructure further comprises a buffer layer which contains a GaInAsSb solid solution and which is disposed between the substrate and the active layer, the buffer layer containing indium (In) less than the active layer. Use of this buffer layer makes it possible to localize minor carriers in an active region, thereby resulting in an increased amount of radiative recombination and, therefore, an increased quantum efficiency of the heterostructure. Furthermore, use of the buffer layer makes it possible to minimize an influence of defects penetrating from the substrate into the active region, thereby resulting in reduction in deep acceptor levels and, correspondingly, in reduction in amount of non-radiative Shokley-Read-Hall recombination, and also to increased quantum efficiency of the heterostructure. Light emitting diodes produced on the basis of the provided heterostructure emit in a mid-infrared spectral range of 1.8-2.4 µm. |
