| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method of a SiC single crystal, capable of non-destructively estimating nitrogen concentration of the SiC single crystal including nitrogen at a concentration of 5×10atom/cmor more in the crystal, and a method for manufacturing the SiC single crystal.SOLUTION: The evaluation method of a SiC single crystal comprises: contacting an optical medium having a refractive index higher than that of the SiC single crystal to a surface of the SiC single crystal; irradiating an interface between the SiC single crystal and the optical medium with an infrared ray; obtaining intensity of an absorption peak having a peak value of an absorption wave number varied in a range of 966-971 cmfrom an obtained infrared spectrum; and estimating a nitrogen concentration in the SiC single crystal on the basis of the obtained absorption peak intensity. A method for manufacturing the SiC single crystal includes the evaluation method. |
