发明名称 HIGH EFFICIENCY EPITAXIAL CHEMICAL VAPOR DEPOSITION (CVD) REACTOR
摘要 The present disclosure presents a chemical vapor deposition reactor having improved chemical utilization and cost efficiency. The wafer susceptors of the present disclosure may be used in a stackable configuration for processing many wafers simultaneously. The reactors of the present disclosure may be reverse-flow depletion mode reactors, which tends to provide uniform film thickness and a high degree of chemical utilization.
申请公布号 EP2419306(B1) 申请公布日期 2016.03.30
申请号 EP20100765064 申请日期 2010.04.14
申请人 SOLEXEL, INC. 发明人 KAMIAN, GEORGE
分类号 B60R25/02;C23C16/455;C23C16/458;C23C16/48;C30B25/12;C30B25/14 主分类号 B60R25/02
代理机构 代理人
主权项
地址