发明名称 THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING DISPLAY APPARATUS
摘要 Disclosed is a thin-film transistor substrate comprising: a substrate; a thin-film transistor formed on the substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; an identification (ID) mark formed on the substrate; and a metal layer touching an upper surface of the ID mark. According to embodiments of the present invention, the purpose of the present invention is to provide the thin-film transistor substrate, a display apparatus, a manufacturing method of the thin-film transistor substrate, and a manufacturing method of the display apparatus.
申请公布号 KR20160034530(A) 申请公布日期 2016.03.30
申请号 KR20140125249 申请日期 2014.09.19
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 RYU, JI HYEON
分类号 H01L27/32;H01L51/56 主分类号 H01L27/32
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