发明名称 HOT WALL REACTOR WITH COOLED VACUUM CONTAINMENT
摘要 Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing substrates includes a chamber body enclosing a processing volume, the chamber body comprising a chamber floor, a chamber wall coupled to the chamber floor, and a chamber lid removably coupled to the chamber wall, wherein at least one of the chamber floor, the chamber wall, and the chamber lid comprise passages for a flow of a thermal control media; a heater plate disposed adjacent to and spaced apart from the chamber floor; a sleeve disposed adjacent to and spaced apart from the chamber wall, the sleeve supported by the heater plate; and a first sealing element disposed at a first interface between the chamber wall and the chamber lid.
申请公布号 SG11201600810T(A) 申请公布日期 2016.03.30
申请号 SGT11201600810 申请日期 2014.07.18
申请人 APPLIED MATERIALS, INC. 发明人 HUSTON, JOEL M.;CUVALCI, OLKAN;KARAZIM, MICHAEL P.;YUDOVSKY, JOSEPH
分类号 H01L21/02;H01L21/324;H01L21/683 主分类号 H01L21/02
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