Semiconductor light emitting device

摘要

According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part.

主权项

1. A semiconductor light emitting device comprising: a first semiconductor layer of a first conductivity type, the first semiconductor layer including a first portion and a second portion; a second electrode provided apart from the first semiconductor layer along a first direction intersecting a second direction from the first portion toward the second portion, the second electrode including a first part provided apart from the second portion along the first direction, and a second part provided apart from the first portion along the first direction; a second semiconductor layer of a second conductivity type provided between the first part and the second portion, the second semiconductor layer contacting the first part; a light emitting layer provided between the second semiconductor layer and the second portion; a first electrode including a contact part, the contact part being provided between the first portion and the second part, the contact part contacting the first portion; and a dielectric member provided between the contact part and the second electrode, and between the first semiconductor layer and the second electrode, and wherein a portion of the dielectric member is between the light emitting layer and the second electrode, a stacking body including the first semiconductor layer, the second semiconductor layer, and the light emitting layer, the stacking body has a side face, and at least a part of the side face of the stacking body being inclined with respect to the first direction, at least a part of an edge of the second semiconductor layer being covered with the dielectric member, wherein a part of the second semiconductor layer contacts the second part.