Manufacturing method of low temperature polysilicon, low temperature polysilicon film and thin film transistor

摘要

A method of manufacturing low temperature polysilicon is provided, comprising: depositing a buffer layer (20) on a base substrate (10); depositing an amorphous silicon layer (30) on the buffer layer; performing a heat treatment after forming the amorphous silicon layer; and dividing the amorphous silicon layer into a plurality of areas for laser annealing according to a thickness distribution of the amorphous silicon layer to form a polycrystalline silicon layer. A low temperature polysilicon film manufactured by the low temperature polysilicon manufacturing method and a thin film transistor having the film are also provided. The method realizes large grain size for polysilicons in each area of the amorphous silicon layer and a uniform distribution of polysilicon grain size across the entire substrate.

主权项

1. A method of manufacturing low temperature polysilicons, comprising:
forming a buffer layer on a base substrate; forming an amorphous silicon layer on said buffer layer; performing heat treatment after forming said amorphous silicon layer; and dividing said amorphous silicon layer into a plurality of areas for laser annealing according to a thickness distribution of said amorphous silicon layer to form a polycrystalline silicon layer; wherein said amorphous silicon layer is divided into three areas: a thinner center area being a second area, two thicker side areas being a first area and a third area, respectively; laser annealing conditions for the first area are: laser pulse frequency of about 200-400 Hz, overlapping ratio of about 92%-98%, and laser energy density of about 240-250mJ/cm2; laser annealing conditions for the second area are: laser pulse frequency of about 200-400 Hz, overlapping ratio of about 92%-98%, and laser energy density of about 230-240mJ/cm2; and laser annealing conditions for the third area are: laser pulse frequency of about 200-400 Hz, overlapping ratio of about 92%-98%, and laser energy density of about 240-250 mJ/cm2.