Semiconductor device with an electric field reduction mechanism in an edge termination region surrounding the active region

摘要

In a semiconductor device, an edge termination region which surrounds an active region includes an electric field reduction mechanism including guard rings, first field plates which come into contact with the guard rings, and second field plates which are provided on the first field plates, with an interlayer insulating film interposed therebetween. The second field plate is thicker than the first field plate. A gap between the second field plates is greater than a gap between the first field plates. A barrier metal film is provided between the second field plate and the interlayer insulating film so as come into conductive contact with the second field plate. A gap between the barrier metal films is equal to the gap between the first field plates.

主权项

1. A semiconductor device comprising:
an active region provided in one main surface of a semiconductor substrate; an edge termination region surrounding the active region; an electric field reduction mechanism provided in the edge termination region, the electric field reduction mechanism including a plurality of guard rings provided in a surface layer of the one main surface of the semiconductor substrate and field plates provided on the guard rings, the field plates having the same potential as the guard rings and including
first field plates provided on surfaces of the guard rings, andsecond field plates provided on the first field plates and having a thickness greater than that of the first field plates, wherein a gap between the second field plates is greater than a gap between the first field plates; an interlayer insulating film interposed between the first field plates and the second field plates; and barrier metal films provided between the second field plate and the interlayer insulating film so as to be in conductive contact with the second field plates, wherein a gap between the barrier metal films is substantially equal to the gap between the first field plates.