| 发明名称 | Dual display device with vertical structure | ||
| 摘要 | Disclosed is a dual display device having a vertical structure, in which a reflective display device and a self-emissive display device are formed on one substrate in a vertical structure so as to enable a reflective display or a self-emissive display according to a situation and provide a high resolution display. The dual display device having a vertical structure includes: a thin film transistor formed on a substrate; a white light emitting device formed on the thin film transistor: a reflection adjusting layer formed on the white light emitting device; and a color converting layer formed on the reflection adjusting layer. | ||
| 申请公布号 | US9299758(B2) | 申请公布日期 | 2016.03.29 |
| 申请号 | US201313960413 | 申请日期 | 2013.08.06 |
| 申请人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE | 发明人 | Park Sang Hee;Hwang Chi Sun |
| 分类号 | H01L27/32;H01L51/52;G02F1/1335 | 主分类号 | H01L27/32 |
| 代理机构 | Rabin & Berdo, P.C. | 代理人 | Rabin & Berdo, P.C. |
| 主权项 | 1. A dual display device having a vertical structure, comprising: a thin film transistor formed on a substrate; a white light emitting device formed on the thin film transistor; a reflection adjusting layer formed directly on the white light emitting device, and partially covering the white light emitting device, the reflection adjusting layer being a single layer formed of an electrochromic material or a nano material; and a color converting layer formed on the reflection adjusting layer. | ||
| 地址 | Daejeon KR | ||