Semiconductor devices including multiple interconnection structures

摘要

A semiconductor device is manufactured by forming a lower structure on a substrate including first and second regions, simultaneously forming a first interconnection on the lower structure of the first region and a first portion of a second interconnection on the lower structure of the second region, forming a first interlayer insulating layer on the first interconnection and on the first portion of the second interconnection, forming a trench exposing a top surface of the first portion of the second interconnection in the first interlayer insulating layer, and forming a second portion of the second interconnection in the trench. Related structures are also disclosed.

主权项

1. A semiconductor device comprising:
a substrate including a first region and a second region; a first interconnection on the substrate in the first region; a second interconnection on the substrate in the second region; a first interlayer insulating layer on the substrate; a second interlayer insulating layer on the first interlayer insulating layer; a first contact between the first interconnection and the substrate; and a second contact between the second interconnection and the substrate, wherein a bottom surface of the first interconnection is disposed at a substantially same height as a bottom surface of the second interconnection, wherein a top surface of the second interconnection is higher than a top surface of the first interconnection, wherein the first interconnection is electrically connected to a first transistor and the second interconnection is electrically connected to a second transistor that operates at a higher voltage than the first transistor, wherein the top surface of the first interconnection is substantially coplanar with a top surface of the first interlayer insulating layer, wherein the top surface of the second interconnection is substantially coplanar with a top surface of the second interlayer insulating layer, wherein the second interconnection includes a first portion in the first interlayer insulating layer and a second portion in the second interlayer insulating layer, wherein a top surface of the first portion is in contact with a bottom surface of the second portion, wherein the first contact and the first interconnection constitute one body without an interface therebetween, and wherein the second contact and the first portion of the second interconnection constitute one body without an interface therebetween.