Method for fabricating nitride semiconductor thin film and method for fabricating nitride semiconductor device using the same

摘要

A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.

主权项

1. A method for fabricating a nitride semiconductor thin film, the method comprising:
preparing a first nitride single crystal doped with an n-type impurity; forming a plurality of etch pits in a surface of the first nitride single crystal by applying an etching gas thereto; growing a second nitride single crystal on the first nitride single crystal having the etch pits formed therein; and forming a plurality of etch pits in a surface of the second nitride single crystal by applying the etching gas thereto after the growth of the second nitride single crystal.