Methods for depositing group III-V layers on substrates

摘要

Methods for depositing a group III-V layer on a substrate are disclosed herein. In some embodiments a method includes depositing a first layer comprising at least one of a first Group III element or a first Group V element on a silicon-containing surface oriented in a <111> direction at a first temperature ranging from about 300 to about 400 degrees Celsius; and depositing a second layer comprising second Group III element and a second Group V element atop the first layer at a second temperature ranging from about 300 to about 600 degrees Celsius.

主权项

1. A method of depositing a group III-V layer on a substrate, comprising:
etching a silicon-containing substrate, having a surface oriented in a direction other than a <111> direction, to etch out a source/drain region in the silicon-containing substrate; growing a silicon-containing surface oriented in the <111> direction in the etched out source/drain region atop a surface oriented in a direction other than the <111> direction; depositing a first layer comprising at least one of a first Group III element or a first Group V element on the silicon-containing surface oriented in the <111> direction at a first temperature ranging from about 300 to about 400 degrees Celsius; and depositing a second layer comprising a second Group III element and a second Group V element atop the first layer at a second temperature ranging from about 300 to about 600 degrees Celsius.