发明名称 |
Methods for forming vias in glass substrates |
摘要 |
Methods for forming vias in glass substrates by laser drilling and acid etching are disclosed. In one embodiment, a method forming a via in a glass substrate includes laser drilling the via through at least a portion of a thickness of the glass substrate from an incident surface of the glass substrate. The method further includes etching the glass substrate for an etching duration to increase a diameter of an incident opening of the via and applying ultrasonic energy to the glass substrate during at least a portion of the etching duration. The applied ultrasonic energy has a frequency between 40 kHz and 192 kHz. |
申请公布号 |
US9296646(B2) |
申请公布日期 |
2016.03.29 |
申请号 |
US201414464851 |
申请日期 |
2014.08.21 |
申请人 |
Corning Incorporated |
发明人 |
Burket Robert Carl;Goers Uta-Barbara;Owusu Samuel Odei;Petriwsky Tammy Lynn |
分类号 |
C03C15/00;H05K1/03;H05K3/00;B23K26/00;B23K26/36;B23K26/38;C03C23/00 |
主分类号 |
C03C15/00 |
代理机构 |
|
代理人 |
Haran John T. |
主权项 |
1. A method of forming a via in a glass substrate, the method comprising:
laser drilling the via through at least a portion of a thickness of the glass substrate, wherein the via is laser drilled through the glass substrate from an incident surface of the glass substrate; etching the glass substrate for an etching duration, thereby increasing a diameter of an incident opening of the via; and applying ultrasonic energy to the glass substrate during at least a portion of the etching duration, wherein the ultrasonic energy has a frequency between 40 kHz and 192 kHz, and wherein the ultrasonic energy has a first frequency and a second frequency or the ultrasonic energy is centered about a primary frequency and dithered or swept above and below the primary frequency. |
地址 |
Corning NY US |