Copper-alloy barrier layers for metallization in thin-film transistors and flat panel displays

摘要

In various embodiments, electronic devices such as thin-film transistors incorporate electrodes featuring a conductor layer and, disposed below the conductor layer, a barrier layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

主权项

1. A method of forming an electrode of a thin-film transistor, the method comprising:
providing a substrate comprising at least one of silicon or glass; depositing over the substrate a barrier layer consisting essentially of at least one metal, the at least one metal comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni; depositing over the barrier layer a conductor layer comprising at least one of Cu, Ag, Al, or Au; forming a mask layer over the barrier layer; patterning the mask layer to reveal a portion of the conductor layer, a remaining portion of the mask layer at least partially defining a shape of the electrode; and thereafter, applying an etchant to remove portions of the conductor layer and the barrier layer not masked by the patterned mask layer, thereby forming a sidewall of the electrode:comprising (i) an exposed portion of the barrier layer, (ii) an exposed portion of the conductor layer, and (iii) an interface between the exposed portion of the barrier layer and the exposed portion of the conductor layer, andsubstantially free of discontinuities notwithstanding the interface.