SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

A semiconductor light emitting element for improving luminous efficiency includes a pit formation layer which is formed on a first semiconductor layer and has a pyramidal pit caused by a threading dislocation generated in the first semiconductor layer; and an active layer which is formed on the pit formation layer and has a flat part and a filling part which fills the pit. The active layer has a multiple quantum well structure where well layers and barrier layers are alternately stacked. The flat part has a flat well part corresponding to the well layer. The filling part has a filling well part corresponding to the well layer. The filling well part has a ring portion formed in an interface with the flat well part, to surround the threading dislocation. The ring portion has a bandgap which is smaller than the bandgap of the flat well part.