| 发明名称 | Self light-emitting device | ||
| 摘要 | To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer (102) is sandwiched between a transparent electrode (103) and a cathode (101), a film thickness of the EL layer (102) and a film thickness of the transparent electrode (102) are equivalent to the film thicknesses in which there is no occurrence of a guided light, and an inert gas is filled in a space between the transparent electrode (103) and a cover material (105). | ||
| 申请公布号 | US9299955(B2) | 申请公布日期 | 2016.03.29 |
| 申请号 | US201514619530 | 申请日期 | 2015.02.11 |
| 申请人 | Semiconductor Energy Laboratory Co., Ltd. | 发明人 | Tsutsui Tetsuo;Konuma Toshimitsu;Mizukami Mayumi |
| 分类号 | H01L51/52;H01L51/50;H01L27/32;G02F1/1335;H01L51/00 | 主分类号 | H01L51/52 |
| 代理机构 | Husch Blackwell LLP | 代理人 | Husch Blackwell LLP |
| 主权项 | 1. A light-emitting device comprising: an EL layer interposed between a first electrode and a second electrode; a member covering an edge portion of the second electrode and covered by the EL layer; a cover material; and a spacer between the first electrode and the cover material, wherein: the EL layer comprises a light-emitting layer, an electron-injection layer, and a hole-injection layer; a space is located between the first electrode and the cover material; the light-emitting device is arranged so that light emitted from the EL layer is extracted through the space and the cover material; and the following relation is established: d≦λ/(4n) where d is a thickness of each of the layers in the EL layer, λ is a wavelength of the light, and n is an refractive index of the EL layer. | ||
| 地址 | JP | ||