发明名称 |
Semiconductor device |
摘要 |
A semiconductor device includes a substrate having a first conductivity type, a first heavily-doped region formed in the substrate and having the first conductivity type, a second heavily-doped region formed in the substrate and having the first conductivity type, and an embedded layer formed in the substrate and separated from the first and second heavily-doped regions. The embedded layer has a second conductivity type different from the first conductivity type. A portion of the embedded layer is beneath the first heavily-doped region. A third heavily-doped region is formed in the substrate, between the first and second heavily-doped regions, and contacting the embedded layer, and has the second conductivity type. |
申请公布号 |
US9299857(B2) |
申请公布日期 |
2016.03.29 |
申请号 |
US201414309731 |
申请日期 |
2014.06.19 |
申请人 |
Macronix International Co., Ltd. |
发明人 |
Chan Wing-Chor;Tsai Ying-Chieh |
分类号 |
H01L29/66;H01L29/808;H02M3/335;H01L29/06 |
主分类号 |
H01L29/66 |
代理机构 |
Finnegan, Henderson, Farabow, Garrett & Dunner LLP |
代理人 |
Finnegan, Henderson, Farabow, Garrett & Dunner LLP |
主权项 |
1. A semiconductor device, comprising: a substrate having a first conductivity type;
a first heavily-doped region formed in the substrate and having the first conductivity type; a second heavily-doped region formed in the substrate and having the first conductivity type; an embedded layer formed in the substrate and separated from the second heavily-doped region, the embedded layer having a second conductivity type different from the first conductivity type, a portion of the embedded layer being beneath the first heavily-doped region; a third heavily-doped region formed in the substrate, between the first and second heavily-doped regions, and contacting the embedded layer, the third heavily-doped region having the second conductivity type; a first insulating isolation layer formed on one side of the first, second, and third heavily-doped regions, a second insulating isolation layer formed between the first and third heavily-doped regions, and a third insulating isolation layer formed between the second and third heavily-doped regions; wherein the embedded layer as a continuous single layer extends partially beneath the first insulating isolation layer, and completely beneath the first heavily-doped region, the third heavily-doped region and the second insulating isolation layer. |
地址 |
Hsinchu TW |