Trench connection between a transistor and a further component

摘要

A semiconductor component arrangement includes a semiconductor body, a transistor structure, a further component, and at least a first electrode structure. The semiconductor body has a first side and a second side. The transistor structure is integrated in the semiconductor body, and includes a source and a drain. The further component is also integrated in the semiconductor body. The first electrode structure is disposed in at least a first trench, and includes at least one electrode. The first electrode structure electrically connects at least one of the source and the drain to the further component.

主权项

1. A semiconductor component arrangement, comprising:
a semiconductor body have a first side and a second side; a trench transistor structure integrated in the semiconductor body, wherein the trench transistor structure has a cell structure comprising a multiplicity of identically constructed transistor cells each having a gate electrode arranged in a transistor trench, wherein each of the transistor cells has a source region and a body region with the body region being doped complementarily to the source region, wherein the source regions of the transistor cells are connected to a common source electrode, and wherein the transistor cells have a common drain zone; a further component integrated in the semiconductor body; at least a first electrode structure disposed in at least a first trench, the first electrode structure comprising at least one electrode, the first electrode structure electrically connecting at least one of the source regions and the common drain zone to the further component.