Nitride-based transistors having structures for suppressing leakage current

摘要

A nitride-based transistor includes a semiconductor structure, a gate electrode and a leakage current suppression structure. The semiconductor structure includes a first nitride-based semiconductor layer doped with impurities of a first conductivity type, a second nitride-based semiconductor layer doped with impurities of a second conductivity type, and a third nitride-based semiconductor layer doped with impurities of the first conductivity type. The gate electrode overlaps the second nitride-based semiconductor layer. The leakage current suppression structure is disposed along edges of the semiconductor structure. The leakage current suppression structure includes a depletion layer in at least one of the first and third nitride-based semiconductor layers.

主权项

1. A nitride-based transistor, comprising:
a semiconductor structure comprising: a first nitride-based semiconductor layer doped with impurities of a first conductivity type; a second nitride-based semiconductor layer doped with impurities of a second conductivity type; and a third nitride-based semiconductor layer doped with impurities of the first conductivity type; a gate electrode overlapping the second nitride-based semiconductor layer; a leakage current suppression structure disposed along edges of the semiconductor structure; and a first trench penetrating the first and second nitride-based semiconductor layers and extending into the third nitride-based semiconductor layer, wherein: the first, second, and third nitride-based semiconductor layers are disposed adjacent to each other; and the leakage current suppression structure comprises a depletion layer disposed in at least one of the first and third nitride-based semiconductor layers.