Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structure

摘要

Semiconductor devices are provided such as, ferroelectric transistors and floating gate transistors, that include an epitaxial perovskite/doped strontium titanate structure formed above a surface of a semiconductor substrate. The epitaxial perovskite/doped strontium titanate structure includes a stack of, in any order, a doped strontium titanate and a perovskite type oxide.

主权项

1. A semiconductor device comprising:
a semiconductor substrate having a source region and a drain region located within said semiconductor substrate and separated by a channel region; and a ferroelectric gate stack located on said channel region and comprising, from bottom to top, an undoped strontium titanate portion, and, in any order, a ferroelectric perovskite material portion and a doped strontium titanate portion, wherein said doped strontium titanate portion contains a dopant other than Nb, Ta or V, wherein a conductive material layer is located beneath said ferroelectric gate stack and on a surface of said semiconductor substrate, and wherein a portion of said conductive material layer extends beyond a vertical edge of said ferroelectric gate stack and is in direct physical contact with a source contact that is located on said source region of said semiconductor substrate.