Semiconductor structure and method for forming the same

摘要

A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a first semiconductor region, a second semiconductor region, a dielectric structure and a gate electrode layer. The first semiconductor region has a first type conductivity. The second semiconductor region has a second type conductivity opposite to the first type conductivity. The first semiconductor region is adjoined to the second semiconductor region. The dielectric structure is on the first semiconductor region and the second semiconductor region. The gate electrode layer is on the dielectric structure.

主权项

1. A semiconductor structure, comprising:
a first semiconductor region comprising a first doped region and a second doped region, wherein the first semiconductor region, the first doped region and the second doped region have a first type conductivity; a second semiconductor region comprising a third doped region, wherein the second semiconductor region and the third doped region have a second type conductivity opposite to the first type conductivity, the second doped region is adjoined between the first doped region and the third doped region, the second doped region has a top sharp portion that protrudes away from the second doped region toward the third doped region protruded to the third doped region, the top sharp portion is a diffused doped portion having the first type conductivity; a dielectric structure on the first semiconductor region and the second semiconductor region; a gate electrode layer on the dielectric structure; and at least one field plate doped region formed in the first semiconductor region under the dielectric structure, wherein the field plate doped region is separated and has a distance from the dielectric structure, the field plate doped region is completely surrounded by the second doped region, and the field plate doped region has the second type conductivity; wherein the top sharp portion is disposed along a bottom surface of the dielectric structure, and a tip of the top sharp portion toward the third doped region is in direct contact with the bottom surface of the dielectric structure.