Methods for reading and programming 1-R resistive change element arrays

摘要

Methods for reading and programming one or more resistive change elements within a 1-R resistive change element array are disclosed. These methods include using measurement and storage elements to measure the electrical response of one or more selected cells within an array and then comparing that stored electrical response to the electrical response of a reference element within the array to determine the resistive state of the one or more selected cells. These methods also include programming methods wherein selectable current limiting elements are used to permit or inhibit programming currents from flowing through selected and unselected cells, respectively. These methods further include programming methods that use specific biasing of array lines to provide sufficient programming currents through only selected cells.

主权项

1. A method for determining the resistive state of at least one resistive change element within a resistive change element array, comprising:
providing a resistive change element array, said resistive change element array comprising:
a plurality of word lines;a plurality of bit lines; anda plurality of resistive change elements, wherein each resistive change element has a first terminal and a second terminal and wherein said first terminal of each resistive change element is in electrical communication with a word line and said second terminal of each resistive change element is in electrical communication with a bit line;a least one resistive reference element, said resistive reference element having a first terminal in electrical communication with a word line and a second terminal in electrical communication with a bit line; initializing all of said bit lines and all of said word lines within said resistive change element array to a ground; selecting one word line within said resistive change element array and charging said selected word line to a preselected voltage while holding all other word lines at ground and allowing all bit lines to float; discharging said selected word line through at least one resistive change element and observing at least one discharge current through said at least one resistive change element; re-initializing all of said bit lines and all of said word lines within said resistive change element array to a ground; selecting at least one resistive reference element and charging the word line in electrical communication with said at least one selected resistive reference element to a preselected voltage while holding all other word lines at ground and allowing all bit lines to float; discharging said word line in electrical communication with said at least one selected resistive reference element through said at least one selected resistive reference element and observing at least one discharge current through at least one selected resistive reference element; comparing at least one discharge current observed through at least one of said resistive change element and at least one discharge current observed through at least one of said selected resistive reference elements to determine the resistive state of at least one resistive change element.