Methods of dry stripping boron-carbon films

摘要

Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.

主权项

1. A method for stripping a boron-carbon film from a substrate, comprising:
positioning the substrate having the boron-carbon film thereon in a chamber; exposing the boron-carbon film to a plasma containing oxygen radicals or ions and hydrogen radicals or ions; reacting the hydrogen radicals or ions with the boron to form a volatile boron species; reacting the oxygen radicals or ions with the carbon to form a volatile carbon species; and exhausting the volatile boron species and the volatile carbon species from the chamber, wherein the exposing the boron-carbon film comprises: introducing a processing gas comprising HxOy to the chamber, wherein x and y are integers or non-integers greater than 1; and generating a plasma from the processing gas.