Ion implant for defect control

摘要

Various methods for implanting dopant ions into a three dimensional feature of a semiconductor wafer are disclosed. The implant temperature may be varied to insure that the three dimensional feature, after implant, has a crystalline inner core, which is surrounded by an amorphized surface layer. The crystalline core provides a template from which the crystalline structure for the rest of the feature can be regrown. In some embodiments, the implant energy and the implant temperature may each be modified to achieve the desired crystalline inner core with the surrounding amorphized surface layer.

主权项

1. A method of implanting dopant ions into a three dimensional feature of a semiconductor wafer, comprising:
implanting said dopant ions into said three dimensional feature at a plurality of incident angles at an implant energy and implant temperature so as to create an amorphized surface layer surrounding a crystalline inner core, wherein, after implanting, said three dimensional feature consists of an amorphized surface layer and a crystalline inner core, and wherein said three dimensional feature has a feature width, and said crystalline inner core has a width of less than one half of said feature width.