Flowable oxide film with tunable wet etch rate

摘要

Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and/or modification of those properties with an integration-compatible treatment process. In certain embodiments, methods of depositing and modifying flowable dielectric films having tunable wet etch rates and other properties are provided. Wet etch rates can be tuned during integration through am integration-compatible treatment process. Examples of treatment processes include plasma exposure and ultraviolet radiation exposure.

主权项

1. A method comprising:
after performing one or more integration operations including at least one of a lithography process, an ion implantation process, a photoresist strip process, a wet etch clean, and a dry etch process on a substrate including a flowable dielectric film, treating the flowable dielectric film to modify a wet etch rate of the flowable dielectric film, wherein the one or more integration operations are performed on a film other than the flowable dielectric film.