Programming and/or erasing a memory device in response to its program and/or erase history

摘要

For one embodiment, a programming method includes programming one or more memory cells of a memory device during a programming operation, determining, internal to the memory device, a number of program pulses required to program a sample of the one or more memory cells of the memory device during the programming operation, and adjusting a program starting voltage level of one or more program pulses applied to the one or more memory cells during a subsequent programming operation in response, at least in part, to the number of program pulses required to program the sample of the one or more memory cells programed during the prior programming operation.

主权项

1. A method of programming a memory device, comprising:
programming one or more memory cells of the memory device during a first programming operation; determining, internal to the memory device, a number of program pulses required to program a sample of the one or more memory cells of the memory device during the first programming operation; and adjusting, internal to the memory device, a program starting voltage level of one or more program pulses applied to the one or more memory cells during a second programming operation, subsequent to the first programming operation, in response, at least in part, to the number of program pulses required to program the sample of the one or more memory cells programed during the first programming operation.