Hybrid read scheme for spin torque MRAM

摘要

A method of reading data from a plurality of bits in a spin-torque magnetoresistive memory array includes performing one or more referenced read operations of the bits, and performing a self-referenced read operation, for example, a destructive self-referenced read operation, of any of the bits not successfully read by the referenced read operation. The referenced read operations can be initiated at the same time or prior to that of the destructive self-referenced read operation.

主权项

1. A magnetoresistive memory device, comprising:
a plurality of magnetic bits, the plurality of magnetic bits in a magnetoresistive memory array; a reference; a first circuit coupled to the reference and the plurality of magnetic bits, the first circuit configured to perform a referenced read of a bit of the plurality of magnetic bits using the reference; and a second circuit coupled to the plurality of magnetic bits and the first circuit, the second circuit configured to complete a self-referenced read for the bit when the referenced read produces a first output.