| 发明名称 | Single layer 3D tracking semiconductor detector | ||
| 摘要 | The present invention relates to a pixel detector (10), comprising a semiconductor sensor layer (12), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer (14) connected to said semiconductor layer (12), said read-out electronics layer (14) comprising an array of read-out circuits (20) for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (12). The neighboring read-out circuits (20) are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighboring read-out circuits (20). The time difference information is indicative of a difference in the Z-components of the locations of charge generations in the corresponding neighboring sensor volumes caused by a particle trajectory that is inclined with respect to the X-Y-plane. | ||
| 申请公布号 | US9297912(B2) | 申请公布日期 | 2016.03.29 |
| 申请号 | US201114346206 | 申请日期 | 2011.09.21 |
| 申请人 | CERN—European Organization for Nuclear Resesarch;Friedrich-Alexander-Universitat Erlange-Nurnberg;Czech Technical University in Prague | 发明人 | Campbell Michael;Michel Thilo;Jakubek Jan |
| 分类号 | G01T1/24;G01T1/29;H01L27/146;H01L31/08;H01L31/115 | 主分类号 | G01T1/24 |
| 代理机构 | Sunstein Kann Murphy & Timbers LLP | 代理人 | Sunstein Kann Murphy & Timbers LLP |
| 主权项 | 1. A pixel detector, comprising a semiconductor sensor layer, in which charges can be liberated upon interaction with particles to be detected, said semiconductor layer defining an X-Y-plane and having a thickness d extending in a Z-direction, and a read-out electronics layer electrically connected to said semiconductor layer, said read-out electronics layer comprising an array of read-out circuits for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer,wherein neighbouring read-out circuits are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighbouring read-out circuits,said time difference information being indicative of a difference in Z-components of the locations of charge generations in the corresponding neighbouring sensor volumes caused by a particle trajectory that is inclined with respect to the X-Y-plane. | ||
| 地址 | Geneva CH | ||