Light emitting device and light emitting device package including the same

摘要

Provided are a light emitting device and a light emitting device package including the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer comprising a plurality of quantum well layers and a plurality of barrier layers, which are alternately laminated on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The plurality of barrier layers comprise a plurality of first barrier layers comprising an n-type dopant, and the conductive type dopant doped into the plurality of first barrier layers have different doping concentrations for each layer.

主权项

1. A light emitting device comprising:
a first conductive type semiconductor layer; an active layer including a plurality of quantum well layers and a plurality of barrier layers alternately arranged on the first conductive type semiconductor layer; and a second conductive type semiconductor layer on the active layer, wherein the plurality of barrier layers comprise a plurality of first barrier layers having different doping concentrations for each layer and a plurality of second barrier layers that are not doped, wherein the plurality of second barrier layers are adjacent to the second conductive type semiconductor layer, wherein the plurality of first barrier layers are adjacent to the first conductive type semiconductor layer, wherein a doping concentration of each of the plurality of first barrier layers increases twice that of a previous first barrier layer as successive first barrier layers are closer to the plurality of second barrier layers, wherein the active layer includes a first region emitting light having a first wavelength band and a second region emitting light having a second wavelength band having a main wavelength longer than a main wavelength of the first wavelength band, wherein a quantum well layer between a first barrier layer most adjacent to the plurality of second barrier layers and a second barrier layer most adjacent to the plurality of first barrier layers has a light emitting intensity greater than a quantum well layer between a second barrier most adjacent to the second conductive type semiconductor layer and the second conductive semiconductor layer, and wherein thicknesses of quantum well layers in the first region are thinner than those of quantum well layers and barrier layers in the second region.