Printed transistor and fabrication method

摘要

A method for fabricating a thin film transistor includes printing source, drain and channel regions on a passivated transparent substrate, forming a gate dielectric over the channel region and forming a gate conductor over the gate dielectric. A permanent antireflective coating is deposited over the source region, drain region and gate electrode, and an interlevel dielectric layer is formed over the permanent antireflective coating. Openings in the permanent antireflective coating and the interlevel dielectric layer are formed to provide contact holes to the source region, drain region and gate electrode. A conductor is deposited in the contact holes to electrically connect to the source region, drain region and gate electrode. Thin film transistor devices and other methods are also disclosed.

主权项

1. A thin film transistor, comprising:
source, drain and channel regions printed on a passivated transparent substrate; a gate dielectric formed over the channel region; a gate conductor formed over the gate dielectric; a permanent antireflective coating formed over the source region, drain region and gate electrode; an interlevel dielectric layer formed over the permanent antireflective coating, the permanent antireflective coating and the interlevel dielectric layer being configured to provide holes for contacting the source region, drain region and gate electrode; and contacts formed through the interlevel dielectric layer and the permanent antireflective coating to electrically connect to the source region, drain region and gate electrode.