Mitigating channel coupling effects during sensing of non-volatile storage elements

摘要

Channel coupling effects during verify and read of non-volatile storage are mitigated by matching the amount of channel coupling that occurs during read with channel coupling that occurred during verify. All bit lines may be read together during both verify and read. In one embodiment, first bias conditions are established on bit lines when verifying each of a plurality of programmed states. A separate set of first bias conditions may be established when verifying each state. Biasing a bit line may be based on the state to which a non-volatile storage elements on the bit line is being programmed. A separate set of second bias conditions are established for each state being read. The second bias conditions for a given state substantially match the first bias conditions for the given state.

主权项

1. A method for operating a non-volatile storage system that includes a plurality of bit lines that are associated with a word line, a plurality of non-volatile storage elements are associated with the word line, comprising:
applying one or more programming voltages to the word line; establishing first bias conditions on the plurality of bit lines when verifying each of a plurality of programmed states, a separate set of first bias conditions are established when verifying each programmed state, the biasing a bit line is based on the state to which a non-volatile storage elements on the bit line is being programmed; sensing conditions of bit lines of the plurality of bit lines after establishing the first bias conditions; establishing second bias conditions on the plurality of bit lines during a read process, a separate set of second bias conditions are established for each programmed state being read, the second bias conditions for a given programmed state substantially match the first bias conditions for the given programmed state; and sensing bit lines of non-volatile storage elements during the read process.