Nonvolatile memory device using a resistance material and a driving method thereof

摘要

A nonvolatile memory device includes a buffer memory, a read circuit configured to read first data stored in the buffer memory in a first read operation, and a write circuit configured to write second data in the buffer memory in a first write operation, wherein the first write operation is performed when a first internal write command is generated during the first read operation.

主权项

1. A nonvolatile memory device, comprising:
a buffer memory; a read circuit configured to read first data stored in the buffer memory in a first read operation; a write circuit configured to write second data in the buffer memory in a first write operation, wherein the first write operation is performed after the first read operation is ended and when a first internal write command is generated during the first read operation; a command generator configured to generate the first internal write command; and a read while write controller configured to receive the first internal write command from the command generator, receive a read start pointer from the read circuit indicating a start of the first read operation, queue the first internal write command while the first read operation is being performed, receive a read end pointer from the read circuit when the first read operation is ended, and provide a second internal write command to the write circuit when the first read operation is ended to instruct the write circuit to perform the first write operation.