发明名称 |
Quantum cascade laser |
摘要 |
A quantum cascade laser includes a semiconductor region having a main surface including first and second regions arranged in a first axis direction; a stacked semiconductor layer disposed on the second region, the stacked semiconductor layer including a core layer and an upper cladding layer disposed on the core layer; and a distributed Bragg reflector disposed on the first region, the distributed Bragg reflector including at least one semiconductor wall having a side surface extending in a second axis direction perpendicular to the main surface of the semiconductor region, the semiconductor wall including the core layer and the upper cladding layer. The side surface of the semiconductor wall is optically coupled to an end facet of the stacked semiconductor layer. The side surface of the semiconductor wall includes a side surface of the core layer having a recess portion depressed from a side surface of the upper cladding layer in the semiconductor wall. |
申请公布号 |
US9300115(B2) |
申请公布日期 |
2016.03.29 |
申请号 |
US201514726091 |
申请日期 |
2015.05.29 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
Tsuji Yukihiro |
分类号 |
H01S5/34;H01S5/343;H01S5/22;H01S5/125 |
主分类号 |
H01S5/34 |
代理机构 |
Smith, Gambrell & Russell, LLP. |
代理人 |
Smith, Gambrell & Russell, LLP. |
主权项 |
1. A quantum cascade laser comprising:
a semiconductor region having a main surface including a first region and a second region arranged in a first axis direction; a stacked semiconductor layer disposed on the second region of the semiconductor region, the stacked semiconductor layer including a core layer and an upper cladding layer disposed on the core layer; and a distributed Bragg reflector disposed on the first region of the semiconductor region, the distributed Bragg reflector including at least one semiconductor wall having a side surface extending in a second axis direction perpendicular to the main surface of the semiconductor region, the semiconductor wall including the core layer and the upper cladding layer, wherein the side surface of the semiconductor wall is optically coupled to an end facet of the stacked semiconductor layer, and the side surface of the semiconductor wall includes a side surface of the core layer having a recess portion depressed from a side surface of the upper cladding layer in the semiconductor wall. |
地址 |
Osaka JP |