Nonvolatile memory device having a current limiting element

摘要

Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises at least one layer of resistive material that is configured to improve the switching performance and lifetime of the formed resistive switching memory element. The electrical properties of the formed current limiting layer, or resistive layer, are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the formed resistive switching memory element found in the nonvolatile memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.

主权项

1. A semiconductor device comprising:
a first layer operable as a first electrode; a second layer operable as a second electrode; a third layer disposed between the first layer and the second layer,
wherein the third layer is operable as a variable resistance layer; and a fourth layer disposed between the first layer and the third layer,
wherein the fourth layer is a resistive layer,wherein the fourth layer maintains a constant resistance during operation of the semiconductor device, andwherein the fourth layer is directly interfacing the third layer;a current steering device disposed between the first layer and the second layer, wherein the fourth layer is disposed between the third layer and the current steering device;wherein the current steering device has a first impedance, wherein the fourth layer has a second impedance being between about 75% and about 125% of the first impedance.