| 发明名称 | Accumulation-mode MOSFET and driving method thereof | ||
| 摘要 | There is provided an accumulation-mode MOSFET. The accumulation-mode MOSFET has a tunnel electron emission portion and a thermionic emission portion which are provided in a source region portion. | ||
| 申请公布号 | US9299844(B2) | 申请公布日期 | 2016.03.29 |
| 申请号 | US201514636817 | 申请日期 | 2015.03.03 |
| 申请人 | TOHOKU UNIVERSITY | 发明人 | Teramoto Akinobu |
| 分类号 | H01L29/66;H01L29/78;H01L29/76;H01L29/08;H03K17/687 | 主分类号 | H01L29/66 |
| 代理机构 | Fitzpatrick, Cella, Harper & Scinto | 代理人 | Fitzpatrick, Cella, Harper & Scinto |
| 主权项 | 1. An accumulation-mode MOSFET comprising: a semiconductor region where a channel region is formed; a gate electrode and a gate insulating film for forming the channel region; a source region portion for injecting carriers; and a drain region for ejecting carriers, wherein a tunnel electron emission portion which emits an electronic tunnel current flowing the channel region through tunneling and a thermionic emission portion which emits an accumulation region current flowing the channel region through thermionic emission are provided in the source region portion. | ||
| 地址 | Miyagi JP | ||