| 发明名称 |
Semiconductor device, heat radiation member, and manufacturing method for semiconductor device |
| 摘要 |
A semiconductor device has a substrate having a front surface, and a rear surface including a fin forming region and a peripheral region surrounding the fin forming region. An insulating substrate is disposed on the front surface of the substrate. A semiconductor chip is disposed on the insulating substrate. A plurality of fins is formed in the fin forming region, and a reinforcing member is formed on the substrate through a bonding member, so as to overlap the peripheral region. |
| 申请公布号 |
US9299633(B2) |
申请公布日期 |
2016.03.29 |
| 申请号 |
US201113814852 |
申请日期 |
2011.08.30 |
| 申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
Soyano Shin |
| 分类号 |
H01L23/15;H01L23/10;H01L23/34;H01L23/367;H01L23/373;H01L23/00;H01L21/50;H01L25/07 |
主分类号 |
H01L23/15 |
| 代理机构 |
|
代理人 |
Kanesaka Manabu |
| 主权项 |
1. A semiconductor device comprising:
a substrate having a front surface, and a rear surface including a fin forming region and a first peripheral region surrounding the fin forming region; an insulating substrate disposed on the front surface; a semiconductor chip disposed on the insulating substrate; a first bonding member bonded to the rear surface of the substrate; a plurality of fins formed in the fin forming region and bonded to the rear surface of the substrate through only the first bonding member; and a first reinforcing member formed on the rear surface of the substrate separately from the plurality of fins and bonded to the rear surface of the substrate through only the first bonding member separately from the plurality of fins, so as to overlap the first peripheral region. |
| 地址 |
Kawasaki-Shi, Kanagawa JP |
