Front-to-back bonding with through-substrate via (TSV)

摘要

Embodiments of mechanisms of forming a semiconductor device structure are provided. The semiconductor device structure includes a first semiconductor wafer and a second semiconductor wafer. The first semiconductor wafer includes a first transistor formed in a front-side of the first semiconductor wafer, and the second semiconductor wafer includes a second transistor formed in a front-side of the second semiconductor wafer. A backside of the second semiconductor wafer is bonded to the front-side of the first semiconductor wafer. The semiconductor device structure further includes an interconnect structure formed over the front-side of the second semiconductor wafer, and at least one first through substrate via (TSV) directly contacts a conductive feature of the first semiconductor wafer and the interconnect structure.

主权项

1. A semiconductor device structure, comprising:
a first semiconductor wafer comprising a first transistor formed in a front-side of the first semiconductor wafer; a second semiconductor wafer comprising a second transistor formed in a front-side of the second semiconductor wafer, wherein a backside of the second semiconductor wafer is bonded to the front-side of the first semiconductor wafer by a bonding layer, and the bonding layer is formed between the first semiconductor wafer and the second semiconductor wafer; an interconnect structure formed over the front-side of the second semiconductor wafer, wherein the interconnect structure comprises a first conductive line and a second conductive line formed over the first conductive line; at least one first through substrate via (TSV) directly contacts a conductive feature of the first semiconductor wafer and the first conductive line of the interconnect structure, wherein the first conductive line has a first surface facing a top surface of the first TSV, and no via is formed on the first surface, and wherein the first TSV passes through the bonding layer, and the conductive feature is formed on the first transistor; and a first redistribution (RDL) structure formed on a backside of the first semiconductor wafer; and at least one second TSV directly contacts the interconnect structure and the first RDL structure.