发明名称 Diffusion barrier for surface mount modules
摘要 A surface-mount package structure for reducing the ingress of moisture and gases thereto is disclosed. The surface-mount structure includes a sub-module having a dielectric layer, semiconductor devices attached to the dielectric layer, a first level interconnect structure electrically coupled to the semiconductor devices, and a second level I/O connection electrically coupled to the first level interconnect and formed on the dielectric layer, with the second level I/O connection configured to connect the sub-module to an external circuit. The semiconductor devices of the sub-module are attached to a substrate structure, with a dielectric material positioned between the dielectric layer and the substrate structure to fill in gaps in the surface-mount structure. A diffusion barrier layer is applied over the sub-module, adjacent the first and second level I/O connections, and extends down to the substrate structure to reduce the ingress of moisture and gases from a surrounding environment into the surface-mount structure.
申请公布号 US9299630(B2) 申请公布日期 2016.03.29
申请号 US201213561868 申请日期 2012.07.30
申请人 General Electric Company 发明人 Gowda Arun Virupaksha;McConnelee Paul Alan;Zhao Ri-an;Chauhan Shakti Singh
分类号 H01L23/02;H01L23/31;H01L23/538;H01L23/373;H01L23/498;H01L21/48;H01L23/00;H01L21/56 主分类号 H01L23/02
代理机构 Ziolkowski Patent Solutions Group, SC 代理人 Ziolkowski Patent Solutions Group, SC ;Testa Jean K.
主权项 1. A surface-mount structure comprising: a sub-module, the sub-module comprising: a dielectric layer;an adhesive layer directly attached to the dielectric layer;at least one semiconductor device adhered to the dielectric layer via the adhesive layer, with each of the at least one semiconductor device including a substrate composed of a semiconductor material;a first level metal interconnect structure electrically coupled to the at least one semiconductor device, the metal interconnect structure extending through vias formed through the dielectric layer so as to be connected to the at least one semiconductor device; anda second level input/output (I/O) connection electrically coupled to the first level metal interconnect structure and formed on the dielectric layer on a side opposite the at least one semiconductor device, the second level I/O connection configured to connect the sub-module to an external circuit; a multi-layer substrate structure having a first surface and a second surface, wherein the at least one semiconductor device of the sub-module is attached to the first surface of the multi-layer substrate; a dielectric material positioned between the dielectric layer and the first surface of the multi-layer substrate structure and at least partially about the at least one semiconductor device of the sub-module; and a diffusion barrier layer applied over the sub-module, adjacent to the first and second level I/O connections, and extending down to the multi-layer substrate structure, the diffusion barrier layer configured to reduce the ingress of moisture and gases from a surrounding environment into the surface-mount structure.
地址 Schenectady NY US