Method of wafer dicing using hybrid laser scribing and plasma etch approach with mask plasma treatment for improved mask etch resistance

摘要

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask is exposed to a plasma treatment process to increase an etch resistance of the mask. The mask is patterned with a laser scribing process to provide gaps in the mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits. Subsequent to exposing the mask to the plasma treatment process, the semiconductor wafer is plasma etched through the gaps in the mask to singulate the integrated circuits.

主权项

1. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:
forming a mask above the semiconductor wafer, the mask comprising a layer covering and protecting the integrated circuits; exposing the mask to a plasma treatment process to increase an etch resistance of the mask; patterning the mask with a laser scribing process to provide gaps in the mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits, wherein the exposing the mask to the plasma treatment process is performed prior to patterning the mask with the laser scribing process; and subsequent to exposing the mask to the plasma treatment process, plasma etching the semiconductor wafer through the gaps in the mask to singulate the integrated circuits.