| 发明名称 | Manufacturing method of MIS-type semiconductor device, including heating a zirconium oxynitride (ZrON) layer | ||
| 摘要 | A manufacturing method of MIS (Metal Insulator Semiconductor)-type semiconductor device includes the steps of: forming a zirconium oxynitride (ZrON) layer; forming an electrode layer containing titanium nitride (TiN) on the zirconium oxynitride (ZrON) layer; and heating the electrode layer. | ||
| 申请公布号 | US9299567(B2) | 申请公布日期 | 2016.03.29 |
| 申请号 | US201414171633 | 申请日期 | 2014.02.03 |
| 申请人 | Toyoda Gosei Co., Ltd. | 发明人 | Mizukami Kiyotaka;Sonoyama Takahiro;Oka Toru;Nishii Junya |
| 分类号 | H01L29/20;H01L21/28;H01L29/51;H01L29/49 | 主分类号 | H01L29/20 |
| 代理机构 | McGinn IP Law Group, PLLC | 代理人 | McGinn IP Law Group, PLLC |
| 主权项 | 1. A manufacturing method of an MIS (Metal Insulator Semiconductor)-type semiconductor device, comprising: forming a zirconium oxynitride (ZrON) layer; forming an electrode layer containing titanium nitride (TiN) on a surface of the zirconium oxynitride (ZrON) layer and in contact with the surface of the zirconium oxynitride (ZrON) layer; heating the electrode layer; and heating the zirconium oxynitride (ZrON) layer, after the forming of the zirconium oxynitride (ZrON) layer and prior to the forming of the electrode layer containing titanium nitride (TiN) on the surface of the zirconium oxynitride (ZrON) layer. | ||
| 地址 | Kiyosu-shi, Aichi-ken JP | ||