Method and apparatus for measuring wafer bias potential

摘要

A device for use in a wafer processing chamber having a plasma forming volume and a hot edge ring. The hot edge ring has a first surface and a second surface. The first surface is in contact with the plasma forming volume. The second surface is not in contact with the plasma forming volume. The device includes a detector operable to contact the second surface of the hot edge ring. The detector can detect a parameter of the hot edge ring and can provide a detected signal based on the detected parameter.

主权项

1. A device for use in a wafer processing chamber having a plasma forming volume, a hot edge ring, the hot edge ring having a first surface and a second surface, the first surface being in contact with the plasma forming volume, the second surface not being in contact with the plasma forming volume, said device comprising:
a detector separated from the plasma forming volume by the hot edge ring and being operable to contact the second surface of the hot edge ring, wherein said detector comprises indium, wherein said detector is operable to detect a voltage of the hot edge ring and provide a detected signal based on the detected voltage.