| 发明名称 | Layered body having a single crystal layer | ||
| 摘要 | A layered body having a single crystal layer including a group III nitride having a composition AlxGayInzN (wherein, X, Y and Z are rational numbers respectively satisfying 0.9≦X≦1.0, 0.0≦Y≦0.1, 0.0≦Z≦0.1, and X+Y+Z=1.0) on a sapphire substrate. The layered body includes an initial single crystal layer that includes the group III nitride composition, an oxygen concentration of 1×1020 cm−3 or more and 5×1021 cm−3 or less and a thickness of 15 nm or more and 40 nm or less on the sapphire substrate and a second group III nitride single crystal layer including the group III nitride composition and having a reduced oxygen concentration than the initial single crystal layer. | ||
| 申请公布号 | US9297093(B2) | 申请公布日期 | 2016.03.29 |
| 申请号 | US201013498344 | 申请日期 | 2010.09.28 |
| 申请人 | Tokuyama Corporation | 发明人 | Kinoshita Toru;Takada Kazuya |
| 分类号 | B32B15/04;C30B29/40;C30B25/18;H01L21/02;H01L33/00 | 主分类号 | B32B15/04 |
| 代理机构 | Cahn & Samuels, LLP | 代理人 | Cahn & Samuels, LLP |
| 主权项 | 1. A layered body having a single crystal layer comprising a group III nitride satisfying a composition shown by AlXGaYInZN (wherein, X, Y and Z are rational numbers respectively satisfying 0.9≦X≦1.0, 0.0≦Y≦0.1, 0.0≦Z≦0.1, and X+Y+Z=1.0) on a sapphire substrate, and said layered body has an initial single crystal layer comprising the group III nitride satisfying said composition and containing oxygen in a concentration of 1×1020 cm−3 or more and 5×1021 cm−3 or less in a thickness of 15 nm or more and 40 nm or less on said sapphire substrate, and a second group III nitride single crystal layer comprising the group III nitride satisfying said composition having reduced oxygen concentration than the initial single crystal layer. | ||
| 地址 | Yamaguchi JP | ||