Method and apparatus for depositing atomic layers on a substrate

摘要

Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

主权项

1. An apparatus for depositing a plurality of atomic layers on a substrate, the apparatus comprising:
a mount configured for rotatably mounting a rotatable drum comprising a deposition head, the deposition head having an output face configured to at least partly face the substrate and supply a precursor gas to the substrate, wherein the output face has a substantially rounded shape defining a movement path of the substrate, the apparatus further comprising a driving controller configured to control a rotational frequency of the deposition head and a transportation controller configured to control a translational velocity of the substrate, a bearing-gas supply for supplying a bearing gas and forming a gas-bearing layer that separates the substrate and the deposition head, wherein the apparatus is configured for moving the substrate along an at least partly rounded circumference of the rotatable drum, and wherein the driving controller and transportation controller are configured, in conjunction, to impart different rates and/or directions of movement between the deposition head and substrate, and to deposit the plurality of atomic layers during continuous movement of the substrate through the apparatus.