发明名称 Transparent conductive film
摘要 A transparent conductive film 1 includes: a substrate film 11 composed of a transparent resin; a high refractive index coat layer 12 formed on a surface of the substrate film 11, and having an optical refractive index higher than that of the substrate film 11; a low refractive index coat layer 13 formed on a surface of the high refractive index coat layer 12, and having an optical refractive index lower than that of the high refractive index coat layer 12; a moisture-proof underlying layer 14 formed on a surface of the low refractive index coat layer 13 and composed of silicon oxide; and a transparent wiring layer 15 patterned on a surface of the underlying layer 14 and composed of crystalline ITO having an optical refractive index higher than the underlying layer 14. The crystallite size of ITO in the transparent wiring layer 15 is 9 nm or less.
申请公布号 US9301398(B2) 申请公布日期 2016.03.29
申请号 US201113879891 申请日期 2011.11.10
申请人 KITAGAWA INDUSTRIES CO., LTD. 发明人 Kawaguchi Yasuhiro;Furuta Ken
分类号 B32B3/00;H05K3/06;C23C14/00;C23C14/08;G06F3/041;H05K1/03;H05K1/09 主分类号 B32B3/00
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P
主权项 1. A transparent conductive film, comprising: a substrate film comprising a transparent resin; a high refractive index coat layer formed on a surface of the substrate film, the high refractive index coat layer having an optical refractive index that is higher than that of the substrate film; a low refractive index coat layer formed on a surface of the high refractive index coat layer, the low refractive index coat layer having an optical refractive index that is lower than that of the high refractive index coat layer; a moisture-proof underlying layer formed on a surface of the low refractive index coat layer and comprising silicon oxide; and a transparent wiring layer patterned on a surface of the underlying layer and comprising crystalline ITO having an optical refractive index that is higher than that of the underlying layer, wherein a crystallite size of ITO in the transparent wiring layer is in the range of 7.8 nm to 9 nm.
地址 Inazawa-shi JP