MOSFETs with multiple dislocation planes

摘要

A method includes forming a metal-oxide-semiconductor field-effect transistor (MOSFET). The Method includes performing an implantation to form a pre-amorphization implantation (PAI) region adjacent to a gate electrode of the MOSFET, forming a strained capping layer over the PAI region, and performing an annealing on the strained capping layer and the PAI region to form a dislocation plane. The dislocation plane is formed as a result of the annealing, with a tilt angle of the dislocation plane being smaller than about 65 degrees.

主权项

1. A method comprising:
forming a metal-oxide-semiconductor field-effect transistor (MOSFET) at a major surface of a semiconductor substrate, the MOSFET comprising:
performing a first implantation to form a first pre-amorphization implantation (PAI) region adjacent to a gate electrode of the MOSFET;forming a first strained capping layer over the first PAI region;performing a first annealing on the first strained capping layer and the first PAI region to form a first dislocation plane, wherein the first dislocation plane is formed as a result of the first annealing, with a tilt angle of the first dislocation plane being smaller than about 65 degrees, wherein the tilt angle is an angle between the major surface and the first dislocation plane; andforming a source/drain region adjacent to the gate electrode, wherein the source/drain region is a source region or a drain region of the MOSFET.