| 发明名称 | Vias and methods of formation thereof | ||
| 摘要 | In accordance with an embodiment of the present invention, a semiconductor device includes a first metal line disposed in a first insulating layer, and a via having a portion surrounding a portion of a first sidewall of the first metal line. | ||
| 申请公布号 | US9299656(B2) | 申请公布日期 | 2016.03.29 |
| 申请号 | US201414293793 | 申请日期 | 2014.06.02 |
| 申请人 | Infineon Technologies AG | 发明人 | Melzner Hanno |
| 分类号 | H01L23/48;H01L23/522;H01L23/528;H01L21/768 | 主分类号 | H01L23/48 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A semiconductor device comprising: a first metal line disposed in a first insulating layer, the first metal line having a first section, a second section, and a third section connecting the first section with the second section, the first section and the second section being parallel and the third section being perpendicular to the first section and the second section; and a via having a portion surrounding a portion of a first sidewall of the second section of the first metal line and a portion of an opposite second sidewall of the second section of the first metal line; a second metal line disposed in the first insulating layer; and a third metal line disposed in the first insulating layer, wherein a distance from the second section of the first metal line to the second metal line is greater than a distance from the first section of the first metal line to the third metal line. | ||
| 地址 | Neubiberg DE | ||