Compositional graded IGZO thin film transistor

摘要

A gradient in the composition of at least one of the elements of a metal-based semiconductor layer is introduced as a function of depth through the layer. The gradient(s) influence the current density response of the device at different gate voltages. In some embodiments, the composition of an element (e.g. Ga) is greater at the interface between the metal-based semiconductor layer and the source/drain layers. The shape of the gradient profile is one of linear, stepped, parabolic, exponential, and the like.

主权项

1. A method comprising:
providing a substrate; forming a metal-based semiconductor layer above a surface of the substrate,
wherein the metal-based semiconductor layer comprises two or more elements;wherein the metal-based semiconductor layer has a lower surface and an upper surface, andwherein at least one element of the metal-based semiconductor layer is varied in concentration from the lower surface to the upper surface during the forming.