| 发明名称 | Method for forming germanium-based layer | ||
| 摘要 | A method for forming a germanium-based layer is provided. The method includes: providing a substrate having a Ge or GeSi surface layer; and implanting atoms, molecules, ions or plasmas containing an element Sn into the Ge surface layer to form a Ge-based GeSn layer, or implanting atoms, molecules, ions or plasmas containing an element Sn into the GeSi surface layer to form a Ge-based GeSnSi layer, or co-implanting atoms, molecules, ions or plasmas containing elements Sn and Si into the Ge surface layer to form a Ge-based GeSnSi layer. | ||
| 申请公布号 | US9299566(B2) | 申请公布日期 | 2016.03.29 |
| 申请号 | US201414350715 | 申请日期 | 2014.03.21 |
| 申请人 | TSINGHUA UNIVERSITY | 发明人 | Xiao Lei;Wang Jing;Zhao Mei;Liang Renrong;Xu Jun |
| 分类号 | H01L21/223;H01L21/265;H01L21/285 | 主分类号 | H01L21/223 |
| 代理机构 | Houtteman Law LLC | 代理人 | Houtteman Law LLC |
| 主权项 | 1. A method for forming a germanium-based layer, comprising: providing a substrate having a Ge or GeSi surface layer; and implanting atoms, molecules, ions or plasmas containing an element Sn into the Ge surface layer to form a Ge-based GeSn layer, or implanting atoms, molecules, ions or plasmas containing an element Sn into the GeSi surface layer to form a Ge-based GeSnSi layer, or co-implanting atoms, molecules, ions or plasmas containing elements Sn and Si into the Ge surface layer to form a Ge-based GeSnSi layer, wherein the Ge-based GeSn layer or the Ge-based GeSnSi layer is strained. | ||
| 地址 | Beijing CN | ||